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Semiconductor
RFP2N12, RFP2N15
2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09196.
BRAND RFP2N12 RFP2N15
September 1998
Features
* 2A, 120V and 150V * rDS(ON) = 1.750 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
[ /Title (RFP2N 12, RFP2N1 5) /Subject 2A, 20V nd 50V, .75 hm, Nhannel ower OSETs) /Author ) /Keyords Harris emionducor, Nhannel ower OSETs, O20AB) /Creator ) /DOCIN O pdfark /Pageode
Ordering Information
PART NUMBER RFP2N12 RFP2N15 PACKAGE TO-220AB TO-220AB
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEL TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
(c) Harris Corporation 1998
File Number
2882.1
5-1
RFP2N12, RFP2N15
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFP2N12 120 120 2 5 20 25 0.2 -55 to 150 300 260 RFP2N15 150 150 2 5 20 25 0.2 -55 to 150 300 260 UNITS V V A A V W W/ oC oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 120 150 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC 2 VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) 17 30 30 17 4 1 25 100 1.750 3.5 25 45 45 25 200 80 25 5 V V V A A nA V ns ns ns ns pF pF pF
oC/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage RFP2N12 RFP2N15 Gate Threshold Voltage Zero-Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case
IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC
VGS = 20V, VDS = 0V ID = 2A, VGS = 10V(Figures 6, 7) ID = 2A, VGS = 10V ID 1A, VDD = 75V, RG = 50, RL = 73, VGS = 10V (Figures 10, 11, 12)
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed test: Pulse width 300s duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = -1A ISD = 2A, dlSD/dt = 50A/s MIN TYP 150 MAX 1.4 UNITS V ns
5-2
RFP2N12, RFP2N15 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
2.5
1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 ID, DRAIN CURRENT (A)
2.0
1.5
1.0
0.5
0 25
50
75 100 125 TC, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A)
3 PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC VGS = 20V VGS = 10V VGS = 8V 2 1.5 VGS = 7V VGS = 6V
2.5
1
0.10
1 0.5
VGS = 5V VGS = 4V
0.01
1
10 100 VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 6
FIGURE 3. FORWARD BIAS OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
IDS(ON), DRAIN TO SOURCE CURRENT (A)
3 125oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2% -40oC 25oC
5
2.5 2 1.5 1 0.5
4
VGS = 10V PULSE DURATION = 80s DUTY CYCLE 2%
125oC
3
25oC
2
-40oC
125oC -40oC
1
0
0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 0 0.5 1.5 1 ID, DRAIN CURRENT (A) 2 2.5
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT
5-3
RFP2N12, RFP2N15 Typical Performance Curves
2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 2A VGS = 10V NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
1.4
VGS = VDS ID = 250A
1.5
1.2
1
1.0
0.5
0.8
0 -50
0 50 100 TJ, JUNCTION TEMPERATURE (oC)
150
0.6 50
0 50 100 TJ, JUNCTION TEMPERATURE (oC)
150
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
240 200 C, CAPACITANCE (pF) 160 120 80 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDD = BVDSS
112.5
GATE SOURCE VOLTAGE 0.75BVDSS 0.50BVDSS 0.25BVDSS
VDD = BVDSS 8
6
CISS
75
COSS
37.5
RL = 75 IG(REF) = 0.095mA VGS = 10V DRAIN SOURCE VOLTAGE
4
2
CRSS 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50
0
0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT)
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Applications Notes AN7254 and AN7260 FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
5-4
VGS, GATE TO SOURCE VOLTAGE (V)
VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD
150
10
RFP2N12, RFP2N15 Test Circuits and Waveforms
tON td(ON) tr RL VDS 90%
tOFF td(OFF) tf 90%
+
RG DUT
-
VDD
0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS
12V BATTERY
0.2F
50k 0.3F
G
DUT
0
IG(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0
FIGURE 13. GATE CHARGE TEST CIRCUIT
FIGURE 14. GATE CHARGE WAVEFORMS
5-5

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